TECHNICAL DATA
In HIC & Co sapphire monocrystals are grown from high quality (high purity) raw materials, which contain uncontrolled impurities <50ppm. In the growth process due to the usage of the HDS method for grow which has a large surface during the process, an intensive evaporation of impurities takes place from the mold. In result of this the crystals grown by this method possess have a purity significantly higher than crystals grown using other methods using the same raw materials. Taking into consideration the former, and taking into account the the unchanging crystal characteristics over the entire surface, we can claim the refractive index of the crystal stays unchanged (homogeneous) on the whole surface of the ingot.
| General |
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Chemical Formula
Growth Method
Structure
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Al2O3
HDSM
Elements of hexagonal rhombohedral
a = b = 4,77 A
c = 13,04 A
|
| Thermal |
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Melting Temperature
Coefficient of linear expansion
Thermal Conductivity
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2050 ° C
6,7 x 10-6 / ° C parallel with С axis
5,0 x 10-6 / ° C perpendicular with С axis
46,06 W/м °K (0° C)
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| Mechanical |
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Density
Hardness
Tensile strength
Bending Strength
Compressive stress
Young’s module
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3,98 g/см3
Mohs: 9
400 MPa/mm2 (25°C) 275 MPa/mm 2 (500°C) 345
MPa/mm2(1000°C)
450 to 895 MPa
2,0 GPa
469 to 494 GPa
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| Electrical |
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Permittivity
Resistivity
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9,3 (103 - 109 Hz, 25° C) perpendicular with С axis
11,5 (103 - 109 Hz, 25° C) parallel with С axis
1016 Ом/см (25°C)
1011 Ом/см (500°C)
106 Ом/см (1000°C)
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OPTICAL CHARACTERISTICS
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